COSI2 AND SI EPITAXIAL-GROWTH IN (111) SI SUB-MICRON LINES WITH APPLICATION TO A PERMEABLE BASE TRANSISTOR

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] DANTERROCHES C, 1984, J MICROSC SPECT ELEC, V9, P147

[4] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469

[5] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[6] GLASTRE G, IN PRESS MICROELECTR

[7] Hollis M. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P102

[8] SPE-COSI2 SUBMICROMETER LINES BY LIFT-OFF USING SELECTIVE REACTION AND ITS APPLICATION TO A PERMEABLE-BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) : 322 - 327

[9] LAJZEROWICZ J, 1986, THESIS GRENOBLE

[10] TWO-DIMENSIONAL FINITE-ELEMENT SIMULATION OF A PERMEABLE-BASE TRANSISTOR [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 24 - 28

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] DANTERROCHES C, 1984, J MICROSC SPECT ELEC, V9, P147

[4] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469

[5] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[6] GLASTRE G, IN PRESS MICROELECTR

[7] Hollis M. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P102

[8] SPE-COSI2 SUBMICROMETER LINES BY LIFT-OFF USING SELECTIVE REACTION AND ITS APPLICATION TO A PERMEABLE-BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) : 322 - 327

[9] LAJZEROWICZ J, 1986, THESIS GRENOBLE

[10] TWO-DIMENSIONAL FINITE-ELEMENT SIMULATION OF A PERMEABLE-BASE TRANSISTOR [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 24 - 28