EFFECT OF ELECTRON-EXCITON COLLISIONS ON FREE-EXCITON LINEWIDTH IN EPITAXIAL GAAS

被引：38
作者：
LEITE, RCC
SHAH, J
GORDON, JP
机构：
[1] Bell Telephone Laboratories, Holmdel
来源：
PHYSICAL REVIEW LETTERS | 1969年 / 23卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.23.1332
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Broadening of the free-exciton emission band with increasing excitation intensity is observed in photoluminescence from GaAs. This effect is quantitatively accounted for by electron-exciton collisions. © 1969 The American Physical Society.
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页码：1332 / &
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