PRODUCTION OF PARAMAGNETIC DEFECTS IN SILICON BY ELECTRON-IRRADIATION

被引：10

作者：

SIEVERTS, EG ^{[1
]}

MULLER, SH ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] UNIV AMSTERDAM,NATUURKUNDIG LAB,NL-1018 XE AMSTERDAM,NETHERLANDS

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 28卷 / 02期

关键词：

D O I：

10.1016/0038-1098(78)90060-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：221 / 225

页数：5

共 20 条

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[8]

KIMERLING LC, 1976, I PHYS C SER, P221

[9] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J].

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[10] EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON [J].

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