OXIDATION-KINETICS OF HOT-PRESSED AND SINTERED ALPHA-SIC

被引：181

作者：

COSTELLO, JA

TRESSLER, RE

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1981年 / 64卷 / 06期

关键词：

D O I：

10.1111/j.1151-2916.1981.tb10297.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：327 / 331

页数：5

共 14 条

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[5] THE MICROSTRUCTURE OF OXIDE SCALES ON OXIDIZED SI AND SIC SINGLE-CRYSTALS [J].

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MITCHELL, TE .

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[6] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1216-1222

[7] ON RATES OF OXIDATION OF SILICON + OF SILICON CARBIDE IN OXYGEN + CORRELATION WITH PERMEABILITY OF SILICA GLASS [J].

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[8]

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[9]

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[10]

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