AUGER-ELECTRON SPECTROSCOPY STUDY ON THE CHARACTERIZATION AND STABILITY OF THE CU9AL4/TIN/SI SYSTEM

被引：9

作者：

NOYA, A

SASAKI, K

机构：

[1] Department of Electronic Engineering, Kitami Institute of Technology, Kitami

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

DIFFUSION BARRIER; METALLIZATION MATERIAL; TIN; CU9AL4; INTERMETALLIC COMPOUND;

D O I：

10.1143/JJAP.30.L1760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffusion barrier properties of TiN films to silicon and the Cu9Al4 compound have been studied using Auger electron spectroscopy. The experimental results indicate that the TiN layer of 800 angstrom is effective as a diffusion barrier at 670-degrees-C. It is found that the reaction of Al in the compound with Ti in the barrier results in the failure of the system due to intermixing of elements at 700-degrees-C. The failure temperature of 700-degrees-C, which is higher than that of aluminum or copper metallization, is due to the stability of the Cu9Al4 compound itself.

引用

页码：L1760 / L1763

页数：4

共 12 条

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