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- [1] Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctionsSCIENTIFIC REPORTS, 2024, 14 (01):Polyakov, Alexander Y.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaSaranin, Danila S.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaShchemerov, Ivan V.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaVasilev, Anton A.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaRomanov, Andrei A.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaKochkova, Anastasiia I.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaGostischev, Pavel论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaChernykh, Alexey V.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaAlexanyan, Luiza A.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaMatros, Nikolay R.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaLagov, Petr B.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Russian Acad Sci IPCE RAS, AN Frumkin Inst Phys Chem & Electrochem, Lab Radiat Technol, Moscow 119071, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaDoroshkevich, Aleksandr S.论文数: 0 引用数: 0 h-index: 0机构: Joint Inst Nucl Res, Joliot Curie 6, Dubna 141980, Moscow Region, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaIsayev, Rafael Sh.论文数: 0 引用数: 0 h-index: 0机构: Joint Inst Nucl Res, Joliot Curie 6, Dubna 141980, Moscow Region, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaPavlov, Yu. S.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci IPCE RAS, AN Frumkin Inst Phys Chem & Electrochem, Lab Radiat Technol, Moscow 119071, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaKislyuk, Alexander M.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Mat Sci Semicond, Leninsky Pr 4, Moscow 119049, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaYakimov, Eugene B.论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, RussiaPearton, Stephen J.论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA Natl Univ Sci & Technol MISIS, Dept Semicond Elect & Semicond Phys, Leninsky Pr 4, Moscow 119049, Russia
- [2] The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical RectifiersCRYSTALS, 2023, 13 (07)Chiang, Chao-Ching论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USALi, Jian-Sian论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USAWan, Hsiao-Hsuan论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USARen, Fan论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USAPearton, Stephen J.论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
- [3] Progress of Doping in Ga2O3 MaterialsLASER & OPTOELECTRONICS PROGRESS, 2021, 58 (15)Wang Dan论文数: 0 引用数: 0 h-index: 0机构: Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R ChinaWang Xiaodan论文数: 0 引用数: 0 h-index: 0机构: Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R ChinaMa Hai论文数: 0 引用数: 0 h-index: 0机构: Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R ChinaChen Huajun论文数: 0 引用数: 0 h-index: 0机构: Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R ChinaMao Hongmin论文数: 0 引用数: 0 h-index: 0机构: Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R ChinaZeng Xionghui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotechnol & Nanobion, Suzhou 215123, Jiangsu, Peoples R China Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heal Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China
- [4] Doping of Ga2O3 with transition metalsPHYSICAL REVIEW B, 2016, 94 (19)Peelaers, H.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USAVan de Walle, C. G.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
- [5] Ge doping of β-Ga2O3 by MOCVDAPL MATERIALS, 2021, 9 (09):Alema, Fikadu论文数: 0 引用数: 0 h-index: 0机构: Agnitron Technol Inc, Chanhassen, MN 55317 USA Agnitron Technol Inc, Chanhassen, MN 55317 USASeryogin, George论文数: 0 引用数: 0 h-index: 0机构: Agnitron Technol Inc, Chanhassen, MN 55317 USA Agnitron Technol Inc, Chanhassen, MN 55317 USAOsinsky, Alexei论文数: 0 引用数: 0 h-index: 0机构: Agnitron Technol Inc, Chanhassen, MN 55317 USA Agnitron Technol Inc, Chanhassen, MN 55317 USAOsinsky, Andrei论文数: 0 引用数: 0 h-index: 0机构: Agnitron Technol Inc, Chanhassen, MN 55317 USA Agnitron Technol Inc, Chanhassen, MN 55317 USA
- [6] Reliability of NiO/β-Ga2O3 bipolar heterojunctionAPPLIED PHYSICS LETTERS, 2025, 126 (01)Gong, Hehe论文数: 0 引用数: 0 h-index: 0机构: Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAYang, Xin论文数: 0 引用数: 0 h-index: 0机构: Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAPorter, Matthew论文数: 0 引用数: 0 h-index: 0机构: Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAYang, Zineng论文数: 0 引用数: 0 h-index: 0机构: Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAWang, Bixuan论文数: 0 引用数: 0 h-index: 0机构: Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USALi, Li论文数: 0 引用数: 0 h-index: 0机构: Australian Natl Univ, Australian Natl Fabricat Facil ACT Node, Canberra, ACT 2601, Australia Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAFu, Lan论文数: 0 引用数: 0 h-index: 0机构: Australian Natl Univ, Australian Natl Fabricat Facil ACT Node, Canberra, ACT 2601, Australia Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USASasaki, Kohei论文数: 0 引用数: 0 h-index: 0机构: Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAWang, Han论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAGu, Shulin论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAZhang, Rong论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAYe, Jiandong论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USAZhang, Yuhao论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
- [7] Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunctionJOURNAL OF SEMICONDUCTORS, 2024, 45 (04)Ji, Xueqiang论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaWang, Jinjin论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaQi, Song论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaLiang, Yijie论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaHu, Shengrun论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaZheng, Haochen论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaZhang, Sai论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaYue, Jianying论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaQi, Xiaohui论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaLi, Shan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaLiu, Zeng论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaShu, Lei论文数: 0 引用数: 0 h-index: 0机构: Beijing Microelect Technol Inst, Beijing 100076, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaTang, Weihua论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R ChinaLi, Peigang论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China
- [8] Combustion synthesis of Ga2O3 nanoparticlesJournal of Materials Science, 2009, 44 : 671 - 675V. Srihari论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science DivisionV. Sridharan论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science DivisionH. K. Sahu论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science DivisionG. Raghavan论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science DivisionV. S. Sastry论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science DivisionC. S. Sundar论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Centre for Atomic Research,Materials Science Division
- [9] Combustion synthesis of Ga2O3 nanoparticlesJOURNAL OF MATERIALS SCIENCE, 2009, 44 (02) : 671 - 675Srihari, V.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaSridharan, V.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaSahu, H. K.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaRaghavan, G.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaSastry, V. S.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaSundar, C. S.论文数: 0 引用数: 0 h-index: 0机构: Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
- [10] Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performanceMICROELECTRONICS JOURNAL, 2024, 153Lee, Geon-Hee论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaLee, Tae-Hee论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaChoi, Ji-Soo论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaCho, Young-Hun论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaKim, Ye-Jin论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaShin, Hoon-Kyu论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Natl Inst Nanomat Technol NINT, Pohang 37673, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaKoo, Sang-Mo论文数: 0 引用数: 0 h-index: 0机构: Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea