INFLUENCE OF SUBSTRATE CURRENT ON HOLD-TIME CHARACTERISTICS OF DYNAMIC MOS ICS

被引:8
作者
KUDOH, O
TSURUMI, M
YAMANAKA, H
WADA, T
机构
关键词
D O I
10.1109/JSSC.1978.1051025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:235 / 239
页数:5
相关论文
共 6 条
  • [1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
    BARAFF, GA
    [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
  • [2] CARR WN, 1972, MOS LSI DESIGN APPLI
  • [3] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
    CROWELL, CR
    SZE, SM
    [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &
  • [4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
    DENNARD, RH
    GAENSSLEN, FH
    YU, HN
    RIDEOUT, VL
    BASSOUS, E
    LEBLANC, AR
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
  • [5] Grove A S, 1967, PHYS TECHNOLOGY SEMI
  • [6] SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
    KAMATA, T
    TANABASHI, K
    KOBAYASHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1127 - 1133