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INFLUENCE OF SUBSTRATE CURRENT ON HOLD-TIME CHARACTERISTICS OF DYNAMIC MOS ICS
被引:8
作者
:
KUDOH, O
论文数:
0
引用数:
0
h-index:
0
KUDOH, O
TSURUMI, M
论文数:
0
引用数:
0
h-index:
0
TSURUMI, M
YAMANAKA, H
论文数:
0
引用数:
0
h-index:
0
YAMANAKA, H
WADA, T
论文数:
0
引用数:
0
h-index:
0
WADA, T
机构
:
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1978年
/ 13卷
/ 02期
关键词
:
D O I
:
10.1109/JSSC.1978.1051025
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:235 / 239
页数:5
相关论文
共 6 条
[1]
DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW,
1962,
128
(06):
: 2507
-
&
[2]
CARR WN, 1972, MOS LSI DESIGN APPLI
[3]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[4]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
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h-index:
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机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
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IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
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0
引用数:
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h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[5]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]
SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
KAMATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KAMATA, T
TANABASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
TANABASHI, K
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(06)
: 1127
-
1133
←
1
→
共 6 条
[1]
DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW,
1962,
128
(06):
: 2507
-
&
[2]
CARR WN, 1972, MOS LSI DESIGN APPLI
[3]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[4]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[5]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]
SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
KAMATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KAMATA, T
TANABASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
TANABASHI, K
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(06)
: 1127
-
1133
←
1
→