BALLISTIC ELECTRON-TRANSPORT IN THIN SILICON DIOXIDE FILMS

被引：83
作者：
FISCHETTI, MV
DIMARIA, DJ
DORI, L
BATEY, J
TIERNEY, E
STASIAK, J
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.35.4404
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4404 / 4415
页数：12
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