GAAS PN JUNCTION STUDIED BY SCANNING TUNNELING POTENTIOMETRY

被引：37

作者：

MURALT, P ^{[1
]}

机构：

[1] IBM CORP,RES LAB ZURICH,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1441 / 1443

页数：3

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