CHARACTERIZATION OF TITANIUM SILICIDE FILMS FORMED BY COMPOSITE SPUTTERING AND RAPID THERMAL ANNEALING

被引：3

作者：

BROADBENT, EK ^{[1
]}

MORGAN, AE ^{[1
]}

COULMAN, B ^{[1
]}

HUANG, IW ^{[1
]}

KUIPER, AET ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

THIN SOLID FILMS | 1987年 / 151卷 / 01期

关键词：

CRYSTALS - Structure - MICROSCOPIC EXAMINATION - SPECTROSCOPY; AUGER ELECTRON - SPUTTERING - X-RAY ANALYSIS;

D O I：

10.1016/0040-6090(87)90008-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium silicide films were prepared by sputtering from a single composite TiSi//x source followed by rapid thermal annealing in N//2. The composition, resistivity, crystal structure and microstructure were investigated using Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning and transmission electron microscopy, X-ray and electron diffraction and a four-point resistivity probe. As-deposited and fully annealed films were found to possess a TiSi//2//. //2 stoichiometry and to contain 6-7 at. % O and significant amounts of several metallic impurities (copper, iron and tungsten). Rapid thermal annealing at 850-1000 degree C for 10 s forms a polycrystalline equilibrium orthorhombic phase TiSi//2 structure with 0. 25-0. 50 mu m grains.

引用

页码：51 / 63

页数：13

共 12 条

[1]

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[2]

BEYERS R, 1985, J APPL PHYS, V57, P4240

[3]

DHEURLE FM, 1982, 1ST P INT S VLSI SCI, V82, P194

[4] MATERIAL CHARACTERIZATION OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED TITANIUM SILICIDE [J].