Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes

被引：10

作者：

Cao Kewei ^{[1
]}

Fu Binglei ^{[2
]}

Liu Zhe ^{[2
]}

Zhao Lixia ^{[2
]}

Li Jinmin ^{[2
]}

Wang Junxi ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 01期

关键词：

light emitting diodes; aging; rate-equation model; defect reduction;

D O I：

10.1088/1674-4926/37/1/014008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The origin of anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes was studied. We found that the intensity of the electroluminescence and photoluminescence spectra were both increased in the very beginning period of aging. With the help of a rate-equation model, we concluded that this kind of luminescence efficiency enhancement is a joint effect of the defect reduction in active layers and the changes out of active layers, for example the Mg acceptor annealing.

引用

页数：4

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