SLIDER LPE OF HG1-XCDXTE USING MERCURY PRESSURE CONTROLLED GROWTH SOLUTIONS

被引：47

作者：

HARMAN, TC

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 06期

关键词：

D O I：

10.1007/BF02661192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1069 / 1084

页数：16

共 10 条

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[2]

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[8] ENERGY GAP IN HG1-XCDXTE BY OPTICAL ABSORPTION [J].

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[9] PARTIAL PRESSURES OVER HGTE-CDTE SOLID-SOLUTIONS .2. RESULTS FOR 10,20, AND 58 MOLE PERCENT CDTE [J].

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[10] HELICONS AND NONRESONANT CYCLOTRON ABSORPTION IN SEMIDONDUCTORS .2. HG1-XCDXTE [J].

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