PREPARATION OF HIGH-PURITY INDIUM ARSENIDE

被引：19

作者：

EFFER, D

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1961年 / 108卷 / 04期

关键词：

D O I：

10.1149/1.2428088

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：357 / 361

页数：5

共 13 条

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[2] CHLORINE AND IODINE AS IMPURITIES IN INAS AND GAP [J].

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[3]

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[4]

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[5] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF INDIUM ARSENIDE [J].

DIXON, JR ;

ENRIGHT, DP .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (05) :753-759

[6] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J].

EFFER, D ;

ANTELL, GR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) :252-253

[7]

FOLBERTH OG, 1954, Z NATURFORSCH, V9A, P954

[8]

GAUMANN A, 1955, SCHWEIZ ARCH ANGEW W, V21, P337

[9] PREPARATION OF INDIUM ARSENIDE [J].

HARADA, RH ;

STRAUSS, AJ .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (01) :121-121

[10] ELECTRICAL PROPERTIES OF N-TYPE INAS [J].

HARMAN, TC ;

GOERING, HL ;

BEER, AC .

PHYSICAL REVIEW, 1956, 104 (06) :1562-1564

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