HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION

被引：5
作者：
PATRIKAR, RM
LAL, R
VASI, J
机构：
[1] Department of Electrical Engineering, Indian Institute of Technology, Bombay
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.352896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Degradation of the gate oxide is often studied by stressing of metal-oxide-semiconductor (MOS) capacitors. Usually the MOS capacitor is stressed in accumulation to avoid the complications due to a voltage drop across the depletion layer if stressed in inversion. High field stressing studies for MOS capacitors with the silicon in inversion are presented in this article. Our observations show that in this mode, silicon properties (mainly minority 'carrier generation lifetime) play an important role.
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页码：3857 / 3859
页数：3
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