REACTIVE PROPERTIES OF GAP LIGHT-EMITTING DIODES

被引：0

作者：

ABDULLAEV, GB ^{[1
]}

ISKENDER.ZA ^{[1
]}

ALIKHANOVA, SA ^{[1
]}

DZHAFAROVA, EA ^{[1
]}

AKHUNDOV, MR ^{[1
]}

KASIMOV, KI ^{[1
]}

机构：

[1] ACAD SCI AZSSR, PHYS INST, BAKU, AZSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1822 / 1823

页数：2

共 17 条

[1]

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[2] INVESTIGATION OF REACTIVE PROPERTIES OF DIFFUSED SI P-N JUNCTIONS IN REGION OF HIGH INJECTION LEVELS AND STRONG ELECTRIC FIELDS [J].

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ISKENDER.ZA ;

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ALIKHANO.S ;

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AKHUNDOV, MR .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :233-&

[3]

Berman L. S., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1511

[4]

BERMAN LS, 1971, SOV PHYS SEMICOND+, V4, P1291

[5]

EPSTEIN A, 1962, P IRE, V50, P331

[6]

EPSTEIN A, 1962, P IRE, V50, P209

[7] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].

GERSHENZON, M ;

MIKULYAK, RM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&

[8]

Grachev V. M., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1055

[9]

GRACHEV VM, 1969, SOV PHYS SEMICOND+, V2, P886

[10] PSEUDO-ABRUPTE LEGIERTE P-N-UBERGANGE IN GAP [J].

JUNG, M .

PHYSICA STATUS SOLIDI, 1966, 18 (02) :743-&

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