NUMERICAL-ANALYSIS ON ABNORMAL THYRISTOR FORWARD VOLTAGE INCREASE DUE TO HEAVY DOPING IN GATED P-BASE LAYER

被引：6
作者：
NAKAGAWA, A
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期
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D O I：
10.1016/0038-1101(81)90044-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：455 / 459
页数：5
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