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A SEMIEMPIRICAL MODEL OF THE MOSFETS SMALL-SIGNAL DRAIN CONDUCTANCE IN SATURATION FOR ANALOG CIRCUIT-DESIGN
被引：0
作者：
SHOUCAIR, FS
机构：
[1] Department of Electrical Engineering, Brown University, Providence, RI
关键词：
Drain Conductance - MOS Amplifiers - MOSFET - VLSI Processes;
D O I：
10.1109/16.129116
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A semi-empirical model is presented for the incremental drain conductance g(d) of the long-channel MOSFET in saturation which is useful for hand analysis of MOS amplifiers. The model's accuracy is higher than that of current commercial simulators and comparable to the parameter spread observed in current VLSI processes. Important modeling errors in the standard SPICE model for g(d) are pointed out.
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页码：1246 / 1248
页数：3
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