OPTICAL-DETECTION OF LIGHT-HOLE AND HEAVY-HOLE RESONANT TUNNELING IN P-TYPE RESONANT TUNNELING STRUCTURES

被引：9

作者：

VANHOOF, C ^{[1
]}

BORGHS, G ^{[1
]}

GOOVAERTS, E ^{[1
]}

机构：

[1] UNIV INSTELLING ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence of operational AlAs-GaAs-AlAs double-barrier resonant tunneling structures with p-type contact layers reveals the charging and subsequent discharging of the hole subbands in the quantum well by sequential resonant tunneling throughout the region of the first three hole resonances. The linewidth of the quantum well luminescence shows free-carrier broadening at each of the resonances. Accumulation and tunneling of photocreated electrons are also prominent.

引用

页码：2139 / 2141

页数：3

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