HOLE TRANSPORT IN SIO2 AND REOXIDIZED NITRIDED SIO2 GATE INSULATORS AT LOW-TEMPERATURE

被引：8
作者：
BOESCH, HE [1 ]
DUNN, GJ [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期
关键词：
D O I：
10.1109/23.124078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge generation and hole transport were measured in reoxidized nitrided oxide (RNO) and radiation-hard thermal oxide (OX) as a function of temperature from 77 to 295 K and applied field from 1 to 5 MV/cm using pulsed irradiation and a fast time-resolved current-voltage (I-V) measurement technique. The insulators show near-equal charge generation at 77 K and qualitatively similar dispersive hole transport with markedly different and strongly field-dependent activation energies. High-field acceleration of hole transport may be a useful radiation-hardening technique for low-temperature operation; RNO has advantages over OX for application of this technique.
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收藏
页码：1083 / 1088
页数：6
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