SPATIAL LOCALIZATION AND DIFFUSION OF ATOMIC SILICON IN DELTA-DOPED GAAS

被引：23
|
作者：
SCHUBERT, EF
CHIU, TH
CUNNINGHAM, JE
TELL, B
STARK, JB
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
[2] MIT,CAMBRIDGE,MA 02139
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期
关键词：
D O I：
10.1007/BF02652103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：527 / 531
页数：5
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