MODE-LOCKING OF A BROAD-AREA SEMICONDUCTOR-LASER WITH A MULTIPLE-QUANTUM-WELL SATURABLE ABSORBER

被引：13

作者：

ADAMS, LE

KINTZER, ES

RAMASWAMY, M

FUJIMOTO, JG

KELLER, U

ASOM, MT

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

[3] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

OPTICS LETTERS | 1993年 / 18卷 / 22期

关键词：

D O I：

10.1364/OL.18.001940

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Hybrid mode locking of a broad-area semiconductor laser with a multiple-quantum-well saturable absorber in an external cavity is demonstrated. A novel method for mode control of the broad-area laser output, based on patterning of the multiple quantum well absorber into a microdot mirror structure, is presented. Pulses as short as 15 ps, at a repetition rate of 593 MHz, with an average power of 9 mW and a peak power of 1 W have been achieved.

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页码：1940 / 1942

页数：3

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