1ST-PRINCIPLES CALCULATIONS OF MANY-BODY BAND-GAP NARROWING AT AN AL/GAAS(110) INTERFACE

被引：53
作者：
CHARLESWORTH, JPA
GODBY, RW
NEEDS, RJ
机构：
[1] Cavendish Labroatory, University of Cambridge, Cambridge CB3 0HE, Madingley Road
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 11期
关键词：
D O I：
10.1103/PhysRevLett.70.1685
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We calculate the quasiparticle electronic structure of a Al/GaAs(110) Schottky barrier as a function of distance from the interface, using the GW self-energy operator. The GaAs band gap is significantly narrowed near the metal, although the classical picture of image-potential narrowing is subject to large quantum corrections. The nature of these corrections is explored further using model calculations.
引用
收藏
页码：1685 / 1688
页数：4
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