HIGH-POWER BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PRODUCED BY AN IMPROVED REGROWTH PROCESS

The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, lambda = 1.3-mu-m, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2 and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8-20 mA at a cavity length L = 200-500-mu-m and a stripe width about 2-3-mu-m. The maximum continuous wave power in single lateral mode operation was 160 mW.