P-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON GLASS SUBSTRATES

被引：1

作者：

YAMAGUCHI, F ^{[1
]}

TANAKA, S ^{[1
]}

NITTA, Y ^{[1
]}

TOMITA, K ^{[1
]}

DOI, A ^{[1
]}

机构：

[1] KINKI UNIV, HIGASHIOSAKA, OSAKA 577, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Laser crystallization; Liquid encapsulation; P-channel; P-CVD; Polycrystalline silicon; Thin-film transistor;

D O I：

10.1143/JJAP.29.L1388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p-channel polycrystalline silicon thin-film transistor was fabricated at low temperature (600°C) on a glass substrate for application to large-area display devices with CMOS peripheral circuits. An active layer was formed by laser crystallization of amorphous silicon film using a liquid encapsulation technique to increase the grain size. The gate insulator and source and drain contacts were made by plasma-enhanced chemical vapor deposition. A hole mobility of 43 cm2/(V ·s) was obtained by these methods. © 1990 IOP Publishing Ltd.

引用

页码：L1388 / L1391

页数：4

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