Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition

Sr0.6Ba04Nb2O6, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the Ar:02 gas ratio was controlled during deposition onto Pt(100)/TiO2/SiO2/Si substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at 650 similar to 800 degrees C. It was found that the film orientation was dependent upon Ar:02 ratio, in which strong (001) orientation was developed when the gas ratio was about 1:4 at 4.3 x 10(-4) ton. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately 10 mu C/cm(2), 60 kV/cm, and 615, respectively.