LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON

被引：1227

作者：

POLLAK, M

GEBALLE, TH

机构：

来源：

PHYSICAL REVIEW | 1961年 / 122卷 / 06期

关键词：

D O I：

10.1103/PhysRev.122.1742

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1742 / &

共 23 条

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