LOW-THRESHOLD BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：46
作者：
CHANGHASNAIN, CJ
WU, YA
LI, GS
HASNAIN, G
CHOQUETE, KD
CANEAU, C
FLOREZ, LT
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] BELLCORE,RED BANK,NJ 07701
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期
关键词：
D O I：
10.1063/1.109713
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 mum diam BH VCSELs, respectively. Both 8 and 16 mum diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [011BAR] crystal orientation.
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页码：1307 / 1309
页数：3
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