DETAILED ELECTRICAL CHARACTERIZATION OF THE DEEP CR ACCEPTOR IN GAAS

被引：150

作者：

MARTIN, GM ^{[1
]}

MITONNEAU, A ^{[1
]}

PONS, D ^{[1
]}

MIRCEA, A ^{[1
]}

WOODARD, DW ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 20期

关键词：

D O I：

10.1088/0022-3719/13/20/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3855 / 3882

页数：28

共 32 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
BLEICHER, M
LANGE, E
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380
[3] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE
BOIS, D
PINARD, P
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177
[4] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE
BROZEL, MR
BUTLER, J
NEWMAN, RC
RITSON, A
STIRLAND, DJ
WHITEHEAD, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09): : 1857 - 1863
[5] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[6] DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI)
INSTONE, T
EAVES, L
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (18): : L771 - L775
[7] IPPOLITOVA GK, 1976, SOV PHYS SEMICOND, V9, P864
[8] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR
KAUFMANN, U
SCHNEIDER, J
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (02) : 143 - 146
[9] PHOTOLUMINESCENCE FROM DEEP CENTERS IN GAAS
KOSCHEL, WH
BISHOP, SG
MCCOMBE, BD
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (06) : 521 - 524
[10] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS
KREBS, JJ
STAUSS, GH
[J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22