PROPOSAL FOR DEVICE TRANSPLANTATION USING A FOCUSED ION-BEAM

被引：15

作者：

OHNISHI, T

KAWANAMI, Y

ISHITANI, T

机构：

[1] Central Research Laboratory, Hitachi Ltd, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 01期

关键词：

Deposition; Device transplantation; Focused ion beam; Microdevice; Sputtering;

D O I：

10.1143/JJAP.29.L188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Device transplantation using a focused ion beam (FIB) has been proposed as a new high-resolution technique for microdevice assembly as well as device repair. FIB sputtering, redeposition, and FIB-induced deposition each work as a cutter or a fixer. Feasibility experiments have been carried out both for dummy-device transplantation on a silicon substrate and for microgear fabrication. © 1990 IOP Publishing Ltd.

引用

页码：L188 / L190

页数：3

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