STATE-OF-THE-ART ION-IMPLANTED LOW-NOISE GAAS-MESFETS AND HIGH-PERFORMANCE MONOLITHIC AMPLIFIERS

被引：0
作者：
WANG, KG
WANG, SK
机构：
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 12期
关键词：
D O I：
10.1109/TMTT.1987.1133881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1501 / 1506
页数：6
相关论文
共 21 条
[1]   NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J].
BAECHTOLD, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :674-+
[2]  
CAPPY, 1985, IEEE ELECTRON DEVICE, V6, P270
[3]   ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J].
CHAO, PC ;
SMITH, PM ;
PALMATEER, SC ;
HWANG, JCM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1042-1046
[4]   IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J].
DAEMBKES, H ;
BROCKERHOFF, W ;
HEIME, K ;
CAPPY, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1032-1037
[5]  
DENG XC, 1981, 8TH P BIENN CORN C, V8, P233
[6]   OPTIMIZATION OF ION-IMPLANTED LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
FENG, M ;
EU, VK ;
KANBER, H .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1171-1176
[7]   HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS [J].
FENG, M ;
EU, VK ;
KANBER, H ;
HACKETT, R .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :327-329
[8]   GAAS-MESFETS MADE BY ION-IMPLANTATION INTO MOCVD BUFFER LAYERS [J].
FENG, M ;
EU, VK ;
ZIELINSKI, T ;
KANBER, H ;
HENDERSON, WB .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :18-20
[9]  
FUKUI H, 1979, IEEE T ELECTRON DEV, V26, P132
[10]   COMPARISON OF GAAS-MESFET NOISE FIGURES [J].
GORONKIN, H ;
NAIR, V .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :47-49
123