THE TRANSIENT INTEGRAL CHARGE CONTROL RELATION - A NOVEL FORMULATION OF THE CURRENTS IN A BIPOLAR-TRANSISTOR

被引：37

作者：

KLOSE, H ^{[1
]}

WIEDER, AW ^{[1
]}

机构：

[1] SIEMENS AG,CENT RES & DEV,D-8000 MUNICH 83,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 05期

关键词：

D O I：

10.1109/T-ED.1987.23050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1090 / 1099

页数：10

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[9] EMITTER EFFECTS IN SHALLOW BIPOLAR-DEVICES - MEASUREMENTS AND CONSEQUENCES [J].

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[10]

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