HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT-X-RAY BEAMS

被引:6
作者
KISHINO, S
IIDA, S
AOKI, S
MIZUTANI, T
WATANABE, T
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
[2] HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUIT,KODAIRA,TOKYO 187,JAPAN
关键词
D O I
10.1063/1.324043
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3138 / 3140
页数:3
相关论文
共 18 条
[1]   CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
APPLIED PHYSICS LETTERS, 1975, 27 (06) :325-327
[2]   DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].
BATTERMAN, BW ;
COLE, H .
REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&
[3]  
BATTERMAN BW, 1969, PHYS REV LETT, V7, P703
[4]   CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&
[5]  
CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107
[6]   EFFECT OF RAPID EARLY GROWTH ON PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON [J].
CULLEN, GW ;
CORBOY, JF ;
SMITH, RT .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :274-283
[7]   SINGLE-CRYSTAL FILMS OF SILICON ON INSULATORS [J].
FILBY, JD ;
NIELSEN, S .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (10) :1357-&
[8]   OBSERVATION OF INTERNAL X-RAY WAVE FIELDS DURING BRAGG-DIFFRACTION WITH AN APPLICATION TO IMPURITY LATTICE LOCATION [J].
GOLOVCHENKO, JA ;
BATTERMAN, BW ;
BROWN, WL .
PHYSICAL REVIEW B, 1974, 10 (10) :4239-4243
[9]  
JAMES RW, 1963, SOLID STATE PHYS, V15, P53
[10]   THEORETICAL CONSIDERATIONS ON BRAGG-CASE DIFFRACTION OF X-RAYS AT A SMALL GLANCING ANGLE [J].
KISHINO, S ;
KOHRA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (05) :551-&