TUNNEL-EFFECT RADIATIVE RECOMBINATION IN P-N JUNCTIONS

被引：0

作者：

YUNOVICH, AE

ORMONT, AB

机构：

来源：

SOVIET PHYSICS JETP-USSR | 1967年 / 24卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：869 / +

页数：1

共 50 条

[1] RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS
LOGAN, RA
GERSHENZON, M
TRUMBORE, FA
WHITE, HG
APPLIED PHYSICS LETTERS, 1965, 6 (06) : 113 - +
[2] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS
MICHAELIS, W
PILKUHN, MH
PHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +
[3] RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN INDIUM PHOSPHIDE
ORMONT, AB
ELISEEV, PG
ISMAILOV, I
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 534 - +
[4] RECOMBINATION RADIATION OF P-N TUNNEL JUNCTIONS IN GAAS
IMENKOV, AN
KOZLOV, MM
MESKIN, SS
NASLEDOV, DN
RAVICH, VN
TSARENKO.BV
SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (02): : 504 - +
[5] TUNNEL EFFECTS IN DIFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE .2. RADIATIVE RECOMBINATION
STUCHERN.VM
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 78 - +
[6] EFFECT OF TEMPERATURE ON SPONTANEOUS RADIATIVE RECOMBINATION EMISSION FROM GAAS P-N JUNCTIONS
WITTMANN, HR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (12): : 1720 - &
[7] MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS
LITVINOV, VL
LOMAKO, VM
TKACHEV, VD
UKHIN, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1928 - &
[8] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION
YUNOVICH, AE
ELISEEV, PG
NAKHODNOVA, IA
ORMONT, AB
OSADCHAYA, LA
STUCHEBNIKOV, VM
SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1496 - 1497
[9] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS
LUCOVSKY, G
REPPER, CJ
APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72
[10] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION
YUNOVICH, AE
ELISEEV, PG
NAKHODNO.IA
ORMONT, AB
OSADCHAY.LA
STUCHEBN.VM
SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1496 - +

← 1 2 3 4 5 →