1.3-MU-M WAVE-GUIDED ELECTROABSORPTION MODULATORS WITH STRAIN-COMPENSATED INASP/INGAP MQW STRUCTURES

被引：10

作者：

WAKITA, K

KOTAKA, I

AMANO, T

SUGIURA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanaguwa Pref., 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 16期

关键词：

ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 2 V for 20 dB on/off ratio) operation using these structures is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 mu m.

引用

收藏

页码：1339 / 1341

页数：3

相关论文

共 5 条

[1] VERY-LOW THRESHOLD CURRENT-DENSITY 1.3-MU-M INASP/INP/INGAP/INP/GAINASP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS [J].

KASUKAWA, A ;

YOKOUCHI, N ;

YAMANAKA, N ;

IWAI, N .

ELECTRONICS LETTERS, 1995, 31 (20) :1749-1750

[2] High saturation power 1.3-mu m MQW electroabsorption waveguide modulators on GaAs substrates [J].

Koi, KK ;

Shen, L ;

Wieder, HH ;

Chang, WSC .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (10) :320-322

[3] HIGH-POWER AND HIGH-EFFICIENCY 1.3-MU-M INASP COMPRESSIVELY-STRAINED MQW LASERS AT HIGH-TEMPERATURES [J].

OOHASHI, H ;

SEKI, S ;

HIRONO, T ;

SUGIURA, H ;

AMANO, T ;

UEKI, M ;

NAKANO, J ;

YAMAMOTO, M ;

TOHMORI, Y ;

FUKUDA, M ;

YOKOYAMA, K .

ELECTRONICS LETTERS, 1995, 31 (07) :556-557

[4] 1.3 mu m InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process [J].

Bouadma, N ;

Ougazzaden, A ;

Kamoun, M ;

Kazmierski, C ;

Silvestre, L .

ELECTRONICS LETTERS, 1996, 32 (17) :1582-1583

[5] HIGHLY RELIABLE OPERATION OF STRAIN-COMPENSATED 0.98-MU-M INGAAS/INGAP/GAAS LASERS WITH INGAASP STRAINED BARRIERS FOR EDFAS [J].

TOYONAKA, T ;

SAGAWA, M ;

HIRAMOTO, K ;

SHINODA, K ;

UOMI, K ;

OHISHI, A .

ELECTRONICS LETTERS, 1995, 31 (03) :198-199