GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS

被引：38

作者：

JOHNSON, NM

BIEGELSEN, DK

MOYER, MD

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：900 / 902

页数：3

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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152
[2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
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[3] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON
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[J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 117 - 118
[4] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ
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[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216
[5] RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATOR
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[J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 99 - 100
[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
GIBBONS, JF
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175
[7] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2
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[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437