GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS

被引：38
作者：
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期
关键词：
D O I：
10.1063/1.92221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：900 / 902
页数：3
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[6]   THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].
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[7]   SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J].
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