HIGH-PERFORMANCE MBE OF (IN)GAAS/ALGAAS HETEROSTRUCTURES FOR HEMTS

被引：2

作者：

BOHM, G ^{[1
]}

KLEIN, W ^{[1
]}

ROHR, T ^{[1
]}

TRANKLE, G ^{[1
]}

WEIMANN, G ^{[1
]}

SCHNELL, RD ^{[1
]}

SCHLEICHER, L ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8000 MUNICH 83,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90582-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality (In)GaAs/AlGaAs HEMT layers were grown with a long-term reproducibility of +/- 1%. The control of growth rates and doping levels is based on calibration layers and the predictable behaviour of the effusion sources. Lateral homogeneity of the heterostructures grown on 3 inch epiready substrates is about +/- 1% with respect to layer thickness, alloy composition and doping. Defect density is routinely below 100 cm-2. Low noise GaAs/AlGaAs HEMTs (gate length 0.3 mum) fabricated from these epilayers using optical lithography, selective dry etching and full dielectric passivation reveal excellent device characteristics (noise figures at 12 GHz and 0.60 dB (on wafer: gain 10 dB); 0.75 dB (in commercial ceramic package: gain 11 dB)).

引用

页码：81 / 84

页数：4