SELF-CONSISTENT TIGHT-BINDING CALCULATIONS OF BAND DISCONTINUITY IN GAAS/ALAS SUPERLATTICES CONTROLLED BY GROUP-IV-ELEMENT INSERTION LAYERS

被引：7
作者：
SAITO, T
IKOMA, T
机构：
[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo, 106
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 01期
关键词：
D O I：
10.1016/0749-6036(92)90225-T
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have calculated the band discontinuities in GaAs AlAs short period superlattices (SL's) with group-IV-element insertion layers. The calculations are performed by using a self-consistent tight-binding method. In the (GaAs)5(Ge2) (AlAs)6 [001] SL, the (Ge2) insertion layers induce a dipole potential of 1.35eV. The resulting valence-band discontinuity ΔEv is 1.86eV creating a type-II band lineup. We also found that the (Ge2) insertion layers induce the impurity-related localized states in the band-gap. © 1992.
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页码：81 / 84
页数：4
相关论文
共 8 条
  • [1] HASHIMOTO Y, 1992, 21ST INT C PHYS SEM
  • [2] EARLY STAGES OF GAAS-GE(110) INTERFACE FORMATION
    MUNOZ, A
    SANCHEZDEHESA, J
    FLORES, F
    [J]. EUROPHYSICS LETTERS, 1986, 2 (05): : 385 - 391
  • [3] MUNOZ A, 1990, PHYS REV B, V41, P2976, DOI 10.1103/PhysRevB.41.2976
  • [4] TUNING BAND OFFSETS AT SEMICONDUCTOR INTERFACES BY INTRALAYER DEPOSITION
    PERESSI, M
    BARONI, S
    RESTA, R
    BALDERESCHI, A
    [J]. PHYSICAL REVIEW B, 1991, 43 (09): : 7347 - 7351
  • [5] ELECTRONIC-STRUCTURE OF (100) SEMICONDUCTOR HETEROJUNCTIONS
    PLATERO, G
    SANCHEZDEHESA, J
    TEJEDOR, C
    FLORES, F
    [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 553 - 557
  • [6] IMPURITY-RELATED BANDS IN GAAS DOPED WITH GE, ZN, AND SE MONOLAYERS
    SAITO, T
    IKOMA, T
    [J]. SURFACE SCIENCE, 1992, 267 (1-3) : 57 - 60
  • [7] TUNING ALAS-GAAS BAND DISCONTINUITIES AND THE ROLE OF SI-INDUCED LOCAL INTERFACE DIPOLES
    SORBA, L
    BRATINA, G
    CECCONE, G
    ANTONINI, A
    WALKER, JF
    MICOVIC, M
    FRANCIOSI, A
    [J]. PHYSICAL REVIEW B, 1991, 43 (03): : 2450 - 2453
  • [8] A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS
    VOGL, P
    HJALMARSON, HP
    DOW, JD
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) : 365 - 378
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