ORGANOMETALLIC PRECURSORS FOR THE FORMATION OF GAN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION - A STUDY OF [(CH3)2GANH2]3

被引:54
|
作者
ALMOND, MJ
DREW, MGB
JENKINS, CE
RICE, DA
机构
来源
JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS | 1992年 / 01期
关键词
D O I
10.1039/dt9920000005
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The reaction of Ga(CH3)3 with an excess of ammonia leads to the formation of (CH3)3Ga.NH3, which, when heated at 120-degrees-C under 450 Torr nitrogen, decomposes to yield CH4 and the trimer [(CH3)2GaNH2]3 1 and not, as previously stated, a dimeric species. A single-crystal X-ray study of 1 revealed that it is a molecular species containing a (GaN)3 ring [Ga-N 1.93(2)-2.05(2) angstrom] in which four consecutive ring atoms are coplanar. The remaining two atoms of the ring are on the same side of the plane so the ring has the sofa conformation. The internal ring angles range from 93.8(8) to 101.3(8)-degrees (for N-Ga-N) and 119.5(9) to 125.3(9)-degrees (for Ga-N-Ga). Compound 1 is monoclinic, space group P2(1)/c, Z = 4. 985 Independent reflections have been measured on a diffractometer and the structure refined to R = 0.076. Spectroscopic evidence shows that 1 retains its trimeric nature in the gas phase. Thus, in the mass spectrum the parent ion is seen, while infrared spectra of mulls of solid 1, of gaseous 1 condensed onto Csl windows and of matrix-isolated 1 are in agreement with the same species being in both solid and gas phases.
引用
收藏
页码:5 / 9
页数:5
相关论文
共 50 条
  • [21] Pressure tuning of multiferroicity in the metal-organic framework [(CH3)2 NH2]Mn(HCOO)3
    Su, Na
    Ma, Yinina
    Liu, Shuang
    Wu, Wei
    Luo, Jianlin
    Sun, Young
    Physical Review B, 2024, 110 (21)
  • [22] Superlattice formation of (Ba,Sr)TiO3 prepared by metal-organic chemical vapor deposition
    Yoo, DC
    Lee, JY
    MATERIALS LETTERS, 2001, 47 (4-5) : 258 - 261
  • [23] FORMATION OF SIN FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING [(CH3)(2)N]3SIN3
    KITOH, H
    MUROYAMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B): : 7076 - 7079
  • [24] Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition
    Yang, Shixu
    Wang, Yang
    Deng, Gaoqiang
    Yu, Ye
    Niu, Yunfei
    Zhang, Lidong
    Yu, Jiaqi
    Lu, Chao
    Zhang, Yuantao
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 158
  • [25] Growth kinetics of chemical vapor deposition of β-SiC from (CH3)2SiCl2/Ar
    Tago, T
    Kawase, M
    Yoshihara, Y
    Hashimoto, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (07) : 2516 - 2522
  • [26] Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition
    Zhang, X
    Chua, SJ
    Liu, W
    Chong, KB
    APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1890 - 1892
  • [27] TOPOTACTIC METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION IN ZEOLITE-Y - STRUCTURE AND PROPERTIES OF CH3MY FROM MOCVD REACTIONS OF (CH3)2MHY, WHERE M = ZN, CD
    STEELE, MR
    MACDONALD, PM
    OZIN, GA
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (16) : 7285 - 7292
  • [28] ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF SUPERCONDUCTING YBA2CU3O7-DELTA FILMS
    THOMAS, O
    PISCH, A
    MOSSANG, E
    WEISS, F
    MADAR, R
    SENATEUR, JP
    JOURNAL OF THE LESS-COMMON METALS, 1990, 164 : 444 - 450
  • [29] Sn doping in thermoelectric Bi2Te3 films by metal-organic chemical vapor deposition
    Kim, Kwang-Chon
    Kwon, Beomjin
    Kim, Hyun Jae
    Baek, Seung-Hyub
    Hyun, Dow-Bin
    Kim, Seong Keun
    Kim, Jin-Sang
    APPLIED SURFACE SCIENCE, 2015, 353 : 232 - 237
  • [30] Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition
    Du, Xuejian
    Mi, Wei
    Luan, Caina
    Li, Zhao
    Xia, Changtai
    Ma, Jin
    JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 75 - 79