EFFECTS OF ANNEALING ON PROPAGATION IN ION-IMPLANTED CONTIGUOUS-DISK BUBBLE-DEVICES

被引：0
作者：
AHN, KY
KEEFE, GE
机构：
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1980年 / 16卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：553 / 557
页数：5
相关论文
共 50 条
[31]   EFFECTS OF CONDUCTOR STRESS ON BUBBLE PROPAGATION IN CONTIGUOUS DISK DEVICES [J].
SANDERS, IL ;
KANE, SM ;
AHN, KY .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2443-2445
[32]   1-MU-M BUBBLE PERMALLOY CONTIGUOUS-DISK DEVICES [J].
SANDERS, IL ;
KANE, SM ;
COHEN, MS .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :2374-2376
[33]   DYNAMICS OF BUBBLE PROPAGATION IN CONTIGUOUS DISK DEVICES [J].
SANDERS, IL ;
KRYDER, MH .
IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (06) :1910-1915
[34]   1-MU-M BUBBLE PROPAGATION ERRORS IN SINGLE-LAYERED ION-IMPLANTED CONTIGUOUS DISK TRACK [J].
HIDAKA, Y ;
MATSUTERA, H ;
MAKINO, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :2522-2525
[35]   ORIENTATION DEPENDENCE OF PROPAGATION MARGIN OF 1-MU-M BUBBLE CONTIGUOUS-DISK DEVICES - CLUES AND CURES [J].
LIN, YS ;
ALMASI, GS ;
DOVE, DB ;
KEEFE, GE ;
SHIR, CC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :2258-2260
[36]   THERMAL ANNEALING OF IMPLANTATION STRAIN IN BUBBLE GARNET-FILMS - STABILITY OF ION-IMPLANTED PROPAGATION DEVICES [J].
PIERCE, RD ;
CARUSO, R ;
MOGAB, CJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4480-4484
[37]   ION-IMPLANTED BUBBLE DEVICES. [J].
Yoshimi, Koichi .
1600, (10)
[38]   OPERATION TEMPERATURE RANGES FOR ION-IMPLANTED BUBBLE-DEVICES WITH 1-MU-M BUBBLES [J].
MIZUNO, K ;
URAI, H .
IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) :1706-1708
[39]   ANNEALING PHENOMENA IN ION-IMPLANTED BUBBLE CIRCUITS [J].
JOUVE, H ;
GERARD, P ;
LUC, A .
IEEE TRANSACTIONS ON MAGNETICS, 1980, 16 (05) :946-948
[40]   CONTIGUOUS-DISK BUBBLE MEMORY WITHOUT CHARGED WALLS [J].
COHEN, MS ;
KANE, SM ;
SANDERS, IL .
IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (06) :1654-1656
12345