EFFECTS OF ANNEALING ON PROPAGATION IN ION-IMPLANTED CONTIGUOUS-DISK BUBBLE-DEVICES

被引：0

作者：

AHN, KY

KEEFE, GE

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1980年 / 16卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：553 / 557

页数：5

共 10 条

[1]

AHN KY, 1980, IEEE T MAGN, V16, P93, DOI 10.1109/TMAG.1980.1060561

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[3] LOCALIZED CONTROL OF MAGNETIZATION IN LPE BUBBLE GARNET FILMS [J].

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[4]

LECRAW RC, 1974, AIP18 C P 1, P188

[5]

LIN Y, UNPUBLISHED

[6] CHARGED WALL BEHAVIOR IN 1-MU-M BUBBLE IMPLANTED STRUCTURES [J].

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IEEE TRANSACTIONS ON MAGNETICS, 1978, 14 (05) :494-499

[7] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

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[8]

NELSON TJ, 1979, 1979 JOINT INTERMAGM

[9]

SMITH DH, 1973, AIP10 C P, P334

[10]

WOLFE R, 1973, AIP10 C P, P339

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