THE STRUCTURE OF THE ZNSE(100)C(2X2) SURFACE

被引：36

作者：

FARRELL, HH ^{[1
]}

TAMARGO, MC ^{[1
]}

SHIBLI, SM ^{[1
]}

CHANG, Y ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53589

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：884 / 887

页数：4

共 10 条

[1]

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[2]

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[4] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100) [J].

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[8] STRUCTURAL CHARACTERIZATION OF GAAS/ZNSE INTERFACES [J].

TAMARGO, MC ;

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HWANG, DM ;

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[9]

TAMARGO MC, 1989, GROWTH OPTICAL PROPE

[10]

TAMARGO MC, 1988, MATER RES SOC S P, V102, P125

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