VIABLE STRAINED-LAYER LASER AT LAMBDA=1100 NM

被引：44

作者：

WATERS, RG ^{[1
]}

YORK, PK ^{[1
]}

BEERNINK, KJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.345758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm 2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.

引用

页码：1132 / 1134

页数：3

共 14 条

[11] DEGRADATION PHENOMENOLOGY IN (AL)GAAS QUANTUM WELL LASERS [J].