VIABLE STRAINED-LAYER LASER AT LAMBDA=1100 NM

被引：44

作者：

WATERS, RG ^{[1
]}

YORK, PK ^{[1
]}

BEERNINK, KJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.345758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm 2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.

引用

收藏

页码：1132 / 1134

页数：3

相关论文

共 14 条

[1] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

BAILLARGEON, JN ;

YORK, PK ;

ZMUDZINSKI, CA ;

FERNANDEZ, GE ;

BEERNINK, KJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[2] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

BOUR, DP ;

GILBERT, DB ;

ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373

[3] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[4] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[5] LONG-LIVED INGAAS QUANTUM WELL LASERS [J].

FISCHER, SE ;

WATERS, RG ;

FEKETE, D ;

BALLANTYNE, JM ;

CHEN, YC ;

SOLTZ, BA .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1861-1862

[6] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS [J].

KOLBAS, RM ;

ANDERSON, NG ;

LAIDIG, WD ;

SIN, YK ;

LO, YC ;

HSIEH, KY ;

YANG, YJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1605-1613

[7]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[8] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M [J].

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE ;

MEEHAN, K ;

ZARRABI, JH .

ELECTRONICS LETTERS, 1988, 24 (24) :1493-1494

[9] NOVEL STRAINED QUANTUM WELL LASER GROWN BY MOVPE [J].

TOTHILL, JN ;

WESTBROOK, L ;

HATCH, CB ;

WILKIE, JH .

ELECTRONICS LETTERS, 1989, 25 (09) :578-580

[10] OPERATING CHARACTERISTICS OF SINGLE-QUANTUM-WELL ALGAAS/GAAS HIGH-POWER LASERS [J].

WAGNER, DK ;

WATERS, RG ;

TIHANYI, PL ;

HILL, DS ;

ROZA, AJ ;

VOLLMER, HJ ;

LEOPOLD, MM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (07) :1258-1265