RECONSTRUCTION OF STEPS ON THE SI(111)2X1 SURFACE

被引：1
作者：
FEENSTRA, RM
STROSCIO, JA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词：
D O I：
10.1116/1.575127
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：801 / 802
页数：2
相关论文
共 6 条
[1]   SCANNING TUNNELING MICROSCOPY [J].
BINNIG, G ;
ROHRER, H .
SURFACE SCIENCE, 1985, 152 (APR) :17-26
[2]  
BINNIG G, 1982, HELV PHYS ACTA, V55, P726
[3]   RECONSTRUCTION OF STEPS ON THE SI(111)2X1 SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
PHYSICAL REVIEW LETTERS, 1987, 59 (19) :2173-2176
[4]   ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1973, 36 (01) :109-122
[5]   IMAGING ELECTRONIC SURFACE-STATES IN REAL SPACE ON THE SI(111)2X1 SURFACE [J].
STROSCIO, JA ;
FEENSTRA, RM ;
FEIN, AP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :838-841
[6]   ELECTRONIC-STRUCTURE OF THE SI(111)2X1 SURFACE BY SCANNING-TUNNELING MICROSCOPY [J].
STROSCIO, JA ;
FEENSTRA, RM ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1986, 57 (20) :2579-2582
1