EFFECT OF UNIAXIAL STRESS ON CRITICAL FIELD IN LOW-TEMPERATURE ELECTRICAL BREAKDOWN IN N-TYPE GERMANIUM

被引：1

作者：

KAWAMURA, N

机构：

[1] Central Research Laboratories, Nippon Electric Company Ltd., Tokyo

来源：

PHYSICS LETTERS A | 1968年 / A 26卷 / 09期

关键词：

D O I：

10.1016/0375-9601(68)90248-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The anisotropic variations of the critical field in low-temperature electrical breakdown in n-Ge with the uniaxial stress are examined and are explained qualitatively on the basis of the repopulation of electrons among valleys. Quantitative discussions are also made. © 1968.

引用

页码：411 / &

共 4 条

[1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
BALSLEV, I
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
[2] ANISOTROPY OF THE HOT-ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES
GOLD, L
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1580 - 1584
[3] HERRING C, 1955, BELL SYSTEM TECH J, V34, P62
[4] ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM AT LOW TEMPERATURES
KOENIG, SH
BROWN, RD
SCHILLING, W
[J]. PHYSICAL REVIEW, 1962, 128 (04): : 1668 - &

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