EXPLOSIVE CRYSTALLIZATION OF A-SI FILMS IN BOTH THE SOLID AND LIQUID-PHASES

被引：63

作者：

AUVERT, G

BENSAHEL, D

PERIO, A

NGUYEN, VT

ROZGONYI, GA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.92862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：724 / 726

页数：3

共 7 条

[1] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J].

AUVERT, G ;

BENSAHEL, D ;

GEORGES, A ;

NGUYEN, VT ;

HENOC, P ;

MORIN, F ;

COISSARD, P .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :613-615

[2]

AUVERT G, 1981 M EL SOC MINN

[3] CRYSTALLIZATION-FRONT VELOCITY DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS [J].

CHAPMAN, RL ;

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :292-295

[4] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[5]

Gilmer G. H., 1980, LASER ELECTRON BEAM, P227

[6]

GOLD RB, 1980, LASER ELECTRON BEAM, P221

[7] EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM [J].

LEAMY, HJ ;

BROWN, WL ;

CELLER, GK ;

FOTI, G ;

GILMER, GH ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :137-139

← 1 →