DEFECT LEVELS IN GALLIUM-ARSENIDE AFTER IRRADIATION WITH LIGHT-IONS

被引：1

作者：

SCHMIDT, T ^{[1
]}

PALMETSHOFER, L ^{[1
]}

LUBKE, K ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,INST MIKROELEKTRON,A-4045 LINZ,AUSTRIA

来源：

ACTA PHYSICA POLONICA A | 1995年 / 87卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.87.543

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Deep level centers in GaAs implanted with light ions (H+, He+) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.

引用

页码：543 / 546

页数：4

共 8 条

[1] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J].

LAGOWSKI, J ;

GATOS, HC ;

KANG, CH ;

SKOWRONSKI, M ;

KO, KY ;

LIN, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :892-894

[2] ELECTRICAL ACTIVATION AND DEFECTS IN SILICON-IMPLANTED AND RAPIDLY THERMAL-ANNEALED GALLIUM-ARSENIDE [J].

PALMETSHOFER, L ;

KASTNER, J ;

LUBKE, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2) :1081-1085

[3]

Pearton S. J., 1990, Material Science Reports, V4, P313, DOI 10.1016/0920-2307(90)90002-K

[4] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[5]

Saunders I. J., 1980, Semi-Insulating III-V Materials, P122

[6] INTERACTION OF BE AND O IN GAAS [J].

VONNEIDA, AE ;

PEARTON, SJ ;

HOBSON, WS ;

ABERNATHY, CR .

APPLIED PHYSICS LETTERS, 1989, 54 (16) :1540-1542

[7]

YUBA Y, 1981, I PHYS C SER, V59, P329

[8]

Ziegler J.F., 1985, STOPPING RANGE IONS

← 1 →