SPECIES-SPECIFIC GROWTH-KINETICS AND FILM PROPERTIES IN SYNCHROTRON RADIATION-EXCITED SI GROWTH WITH DISILANE

被引：8

作者：

AKAZAWA, H

UTSUMI, Y

NAGASE, M

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90426-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We discuss species-specific photochemistry in synchrotron radiation (SR)-excited Si crystal growth using disilane. By combining atomic layer epitaxy (ALE) and chemical vapor deposition (CVD), activated either thermally or electronically, we clarify growth kinetics characteristics of the pertinent intermediate species. The microscopic surface morphology of the Si crystal depends on the growth methods. It is controlled by Si-adatom migration which is correlated with the coverage of hydrogen atoms passivating the surface.

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页码：299 / 303

页数：5

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