CRYSTAL ORIENTATION DEPENDENCE OF IONIZATION RATES IN GERMANIUM

被引：44

作者：

MIKAWA, T ^{[1
]}

KAGAWA, S ^{[1
]}

KANEDA, T ^{[1
]}

TOYAMA, Y ^{[1
]}

MIKAMI, O ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.91932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：387 / 389

页数：3

共 7 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GE [J].

DAI, BT ;

CHANG, CY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5198-&

[3] DETERMINATION OF GERMANIUM IONIZATION COEFFICIENTS FROM SMALL-SIGNAL IMPATT DIODE CHARACTERISTICS [J].

DECKER, DR ;

DUNN, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :290-+

[4] CRYSTAL ORIENTATION DEPENDENCE OF MULTIPLICATION NOISE IN GERMANIUM AVALANCHE PHOTO-DIODES [J].

KANEDA, T ;

MIKAWA, T ;

TOYAMA, Y .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :692-694

[5] INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J].

LAW, HD ;

LEE, CA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :331-340

[6] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[7] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

← 1 →