P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE

被引:19
|
作者
MARINE, J
RODOT, H
机构
关键词
D O I
10.1063/1.1653431
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:352 / &
相关论文
共 50 条
  • [1] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE
    HOU, SL
    BECK, K
    MARLEY, JA
    APPLIED PHYSICS LETTERS, 1969, 14 (05) : 151 - &
  • [2] TYPE CONVERSION AND P-N JUNCTION FURMATION IN ION-IMPLANTED ZNSE
    CHUNG, CH
    KIM, KB
    NAHM, K
    PARK, YS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 847 - &
  • [3] TYPE CONVERSION AND RHO-ETA JUNCTION FORMATION IN ION-IMPLANTED ZNTE
    HOU, SL
    BECK, K
    MARLEY, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (04): : 559 - &
  • [4] P-N-JUNCTION FORMATION BY LASER ANNEALING OF ION-IMPLANTED SILICON
    LINDNER, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (01): : 263 - 267
  • [5] TYPE CONVERSION AND P-N JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZNSE
    PARK, YS
    CHUNG, CH
    APPLIED PHYSICS LETTERS, 1971, 18 (03) : 99 - &
  • [6] PHOTOLUMINESCENCE OF ION-IMPLANTED ZNTE
    WOOI, WR
    MEESE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 319 - 319
  • [7] Radiative recombination in a ZnTe p-n junction
    Iodko, VN
    Gribkovskii, VP
    Belyaeva, AK
    Suprun-Belevich, YR
    Ketko, ZA
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1170 - 1174
  • [8] Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes
    Duan, Yu
    Wang, Jingshan
    Zhu, Zhongtao
    Piao, Guanxi
    Ikenaga, Kazutada
    Tokunaga, Hiroki
    Koseki, Shuuichi
    Bulsara, Mayank
    Fay, Patrick
    APPLIED PHYSICS LETTERS, 2023, 122 (21)
  • [9] Formation of p-n junction in InSb by ion implantation
    Rao, BV
    Yadav, AD
    Dubey, SK
    Gupta, GK
    Gadkari, DB
    Shah, AP
    Arora, BM
    SOLID STATE PHYSICS, VOL 41, 1998, 1999, : 510 - 511
  • [10] Dependency of p-n junction depth on ion species implanted in HgCdTe
    Ebe, H
    Tanaka, M
    Miyamoto, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 854 - 857